DMT3009UDT-7
MOSFET 2N-CH 30V 10.6A 8VDFNManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMT3009UDT-7 is a dual N-channel MOSFET array designed for high-density power applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.6A at 25°C ambient temperature, and 30A at 25°C case temperature. The low on-resistance of 11.1 mOhm at 11A and 10V gate-source voltage (Vgs) ensures efficient power transfer. The device offers a maximum power dissipation of 1.1W (Ta) and 16W (Tc). Key parameters include a gate charge (Qg) of 14.6nC (max) at 10V and input capacitance (Ciss) of 894pF (max) at 15V. The DMT3009UDT-7 is housed in an 8-VDFN exposed pad package, specifically the V-DFN3030-8 (Type KS) supplied on tape and reel. This MOSFET array is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W (Ta), 16W (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Ta), 30A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 894pF @ 15V |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.6nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | V-DFN3030-8 (Type KS) |
| Grade | - |
| Qualification | - |
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