DMT2005UDV-7
MOSFET 2N-CH 24V 50A POWERDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMT2005UDV-7 is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 24V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 50A at 25°C (Tc). The device is housed in an 8-PowerVDFN package, specifically the PowerDI3333-8 (Type UXC), facilitating surface mounting. Key electrical characteristics include a low on-resistance (Rds On) of 7mOhm at 14A and 10V, and a gate charge (Qg) of 46.7nC (max) at 10V. Input capacitance (Ciss) is rated at 2060pF (max) at 10V. The maximum power dissipation is 900mW (Ta). Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in automotive, industrial, and consumer electronics sectors requiring robust power switching solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW (Ta) |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 14A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 46.7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXC) |
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