DMT2005UDV-13
MOSFET 2N-CH 24V 50A POWERDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated DMT2005UDV-13 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. Featuring a 24V drain-source voltage rating and a continuous drain current capability of 50A at 25°C (Tc), this component is built for demanding power management tasks. The low on-resistance of 7mOhm at 14A and 10V (Vgs) minimizes conduction losses, contributing to improved thermal performance. Its PowerDI3333-8 (Type UXC) package ensures excellent thermal dissipation and a compact footprint, suitable for surface mounting. With a gate charge of 46.7nC (max) and input capacitance of 2060pF (max), it is optimized for fast switching speeds. This MOSFET array is commonly utilized in automotive electronics, industrial power supplies, and battery management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW (Ta) |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2060pF @ 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 14A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 46.7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXC) |
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