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DMS3019SSD-13

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DMS3019SSD-13

MOSFET 2N-CH 30V 7A/5.7A 8SO

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMS3019SSD-13 is a 30V N-channel dual MOSFET array in an 8-SOIC package. This device features a logic level gate and offers a continuous drain current of 7A and 5.7A at 25°C. Key parameters include a maximum power dissipation of 1.19W, a low on-resistance of 15mOhm at 9A and 10V, and a gate charge of 42nC at 10V. Input capacitance (Ciss) is a maximum of 1932pF at 15V, and the threshold voltage (Vgs(th)) is 2.4V at 250µA. The DMS3019SSD-13 is suitable for applications requiring efficient switching and power management in automotive and industrial sectors. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.19W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A, 5.7A
Input Capacitance (Ciss) (Max) @ Vds1932pF @ 15V
Rds On (Max) @ Id, Vgs15mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-SO

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