DMS3019SSD-13
MOSFET 2N-CH 30V 7A/5.7A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMS3019SSD-13 is a 30V N-channel dual MOSFET array in an 8-SOIC package. This device features a logic level gate and offers a continuous drain current of 7A and 5.7A at 25°C. Key parameters include a maximum power dissipation of 1.19W, a low on-resistance of 15mOhm at 9A and 10V, and a gate charge of 42nC at 10V. Input capacitance (Ciss) is a maximum of 1932pF at 15V, and the threshold voltage (Vgs(th)) is 2.4V at 250µA. The DMS3019SSD-13 is suitable for applications requiring efficient switching and power management in automotive and industrial sectors. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.19W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A, 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1932pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SO |
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