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DMS3017SSD-13

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DMS3017SSD-13

MOSFET 2N-CH 30V 8A/6A 8SO

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMS3017SSD-13 is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-source voltage (Vdss) of 30V and continuous drain current (Id) ratings of 8A and 6A at 25°C. The MOSFETs offer a low on-resistance (Rds On) of 12mOhm at 9.5A and 10V, characteristic of a logic-level gate. Key electrical parameters include a gate charge (Qg) of 30.6nC (max) at 10V and input capacitance (Ciss) of 1276pF (max) at 15V. With a maximum power dissipation of 1.19W and an operating temperature range of -55°C to 150°C, this device is suitable for power management and switching applications across various industries. The DMS3017SSD-13 is supplied in an 8-SOIC package on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.19W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A, 6A
Input Capacitance (Ciss) (Max) @ Vds1276pF @ 15V
Rds On (Max) @ Id, Vgs12mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs30.6nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SO

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