DMS3017SSD-13
MOSFET 2N-CH 30V 8A/6A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMS3017SSD-13 is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-source voltage (Vdss) of 30V and continuous drain current (Id) ratings of 8A and 6A at 25°C. The MOSFETs offer a low on-resistance (Rds On) of 12mOhm at 9.5A and 10V, characteristic of a logic-level gate. Key electrical parameters include a gate charge (Qg) of 30.6nC (max) at 10V and input capacitance (Ciss) of 1276pF (max) at 15V. With a maximum power dissipation of 1.19W and an operating temperature range of -55°C to 150°C, this device is suitable for power management and switching applications across various industries. The DMS3017SSD-13 is supplied in an 8-SOIC package on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.19W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1276pF @ 15V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 9.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30.6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
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