DMP2100UCB9-7
MOSFET 2P-CH 20V 3A 9UWLBManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMP2100UCB9-7 is a 20V, 2 P-channel MOSFET array designed for compact power management applications. This device offers a continuous drain current capability of 3A per channel with a low on-resistance of 100mOhm at 1A, 4.5V. Featuring a logic level gate for compatibility with low-voltage control signals, it boasts a maximum power dissipation of 800mW. The DMP2100UCB9-7 utilizes advanced MOSFET technology and is housed in a 9-UFBGA, WLBGA package suitable for surface mounting. Key electrical characteristics include a gate charge of 4.2nC (max) at 4.5V and an input capacitance of 310pF (max) at 10V. This component is commonly employed in portable electronics, battery management systems, and automotive applications requiring efficient power switching in a small footprint. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) Common Source |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | U-WLB1515-9 |
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