DMNH6021SPDWQ-13
MOSFET 2N-CH 60V 8.2A PWRDI50Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated's DMNH6021SPDWQ-13 is a 60V, 2 N-Channel MOSFET array designed for demanding automotive applications. This device features a continuous drain current capability of 8.2A at ambient temperature and 32A at case temperature, with a low on-resistance of 25mOhm at 15A and 10V. The PowerDI5060-8 (Type R) package with wettable flanks ensures excellent solder joint reliability and facilitates automated optical inspection. Key parameters include a gate charge of 20.1nC (max) at 10V and input capacitance of 1143pF (max) at 25V. The MOSFET array operates across a temperature range of -55°C to 175°C and is AEC-Q101 qualified, making it suitable for power management and switching in automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 32A(Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1143pF @ 25V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 20.1nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI5060-8 (Type R) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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