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DMNH6021SPDW-13

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DMNH6021SPDW-13

MOSFET 2N-CH 60V 8.2A PWRDI50

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMNH6021SPDW-13 is a dual N-channel MOSFET array designed for demanding applications. This device features a 60V drain-to-source breakdown voltage and offers a continuous drain current capability of 8.2A at ambient temperature and 32A at case temperature. With a low on-resistance of 25mOhm at 15A and 10V, it minimizes conduction losses. The MOSFET array is housed in a wettable flank PowerDI5060-8 package, facilitating automated optical inspection (AOI) for enhanced manufacturing yield. Key electrical parameters include a gate charge of 20.1nC (max) and input capacitance of 1143pF (max) at 25V. Operating across a wide temperature range of -55°C to 175°C, this component is suitable for automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount, Wettable Flank
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.5W (Ta)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 32A(Tc)
Input Capacitance (Ciss) (Max) @ Vds1143pF @ 25V
Rds On (Max) @ Id, Vgs25mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs20.1nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI5060-8 (Type R)

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