DMN63D8LDWQ-7
MOSFET 2N-CH 30V 0.22A SOT363Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN63D8LDWQ-7 is a MOSFET array featuring two independent N-channel transistors in a SOT-363 package. This device boasts a 30V drain-source voltage rating and a continuous drain current capability of 220mA at 25°C, with a maximum power dissipation of 300mW. The Rds(On) is specified at 2.8 Ohms maximum at 250mA, 10V. With a gate charge of 0.87nC at 10V and input capacitance of 22pF at 25V, it is suitable for applications demanding precise switching characteristics. This component is AEC-Q101 qualified, indicating its suitability for the automotive industry, and operates across a temperature range of -55°C to 150°C. The dual N-channel configuration makes it efficient for load switching and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 220mA |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 250mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.87nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-363 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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