DMN63D1LDW-13
MOSFET 2N-CH 60V 0.25A SOT363Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN63D1LDW-13 is a dual N-channel MOSFET array in a SOT-363 package. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 250mA at 25°C. The Rds On is a maximum of 2 Ohms at 500mA, 10V, with a Gate Charge (Qg) of 0.3nC at 4.5V. The input capacitance (Ciss) is rated at 30pF maximum at 25V. With a maximum power dissipation of 310mW and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and general-purpose switching. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 310mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 250mA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 0.3nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SOT-363 |
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