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DMN63D1LDW-13

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DMN63D1LDW-13

MOSFET 2N-CH 60V 0.25A SOT363

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMN63D1LDW-13 is a dual N-channel MOSFET array in a SOT-363 package. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 250mA at 25°C. The Rds On is a maximum of 2 Ohms at 500mA, 10V, with a Gate Charge (Qg) of 0.3nC at 4.5V. The input capacitance (Ciss) is rated at 30pF maximum at 25V. With a maximum power dissipation of 310mW and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and general-purpose switching. The device is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max310mW
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C250mA
Input Capacitance (Ciss) (Max) @ Vds30pF @ 25V
Rds On (Max) @ Id, Vgs2Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs0.3nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageSOT-363

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