DMN61D9UDW-7
MOSFET 2N-CH 60V 0.35A SOT363Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN61D9UDW-7 is a dual N-channel MOSFET array configured in a SOT-363 package. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 350mA at 25°C. The on-resistance (Rds On) is a maximum of 2 Ohms at 50mA and 5V. Key parameters include a gate charge (Qg) of 0.4nC at 4.5V and input capacitance (Ciss) of 28.5pF at 30V. The MOSFET array operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 320mW. This component is commonly utilized in consumer electronics and portable devices. The DMN61D9UDW-7 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 320mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 350mA |
| Input Capacitance (Ciss) (Max) @ Vds | 28.5pF @ 30V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.4nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-363 |
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