DMN5L06VKQ-7
MOSFET 2N-CH 50V 0.28A SOT563Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN5L06VKQ-7 is a dual N-channel MOSFET array designed for surface mounting in a SOT-563 package. This AEC-Q101 qualified component features a 50V drain-to-source voltage and a continuous drain current of 280mA at 25°C ambient temperature. With a maximum power dissipation of 250mW, the DMN5L06VKQ-7 offers an Rds(On) of 2 Ohms at 50mA and 5V. Its logic-level gate feature and 1.2V gate threshold voltage make it suitable for applications requiring efficient switching. The device operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive electronics and general-purpose switching applications. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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