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DMN5L06VKQ-13

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DMN5L06VKQ-13

MOSFET 2N-CH 50V 0.28A SOT563

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMN5L06VKQ-13 is a 50V dual N-channel MOSFET array in a SOT-563 package. This automotive-grade component offers a continuous drain current of 280mA (Ta) and a maximum power dissipation of 250mW. Key electrical characteristics include a Drain to Source Voltage (Vdss) of 50V and a typical Rds On of 2 Ohms at 50mA and 5V. The device features a Gate Threshold Voltage (Vgs(th)) of 1V at 250µA and an input capacitance of 50pF at 25V. Qualified to AEC-Q101 standards, this MOSFET array is suitable for applications in automotive electronics and other demanding environments. It is supplied in Bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max250mW
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C280mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Rds On (Max) @ Id, Vgs2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-563
GradeAutomotive
QualificationAEC-Q101

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