DMN5L06VKQ-13
MOSFET 2N-CH 50V 0.28A SOT563Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN5L06VKQ-13 is a 50V dual N-channel MOSFET array in a SOT-563 package. This automotive-grade component offers a continuous drain current of 280mA (Ta) and a maximum power dissipation of 250mW. Key electrical characteristics include a Drain to Source Voltage (Vdss) of 50V and a typical Rds On of 2 Ohms at 50mA and 5V. The device features a Gate Threshold Voltage (Vgs(th)) of 1V at 250µA and an input capacitance of 50pF at 25V. Qualified to AEC-Q101 standards, this MOSFET array is suitable for applications in automotive electronics and other demanding environments. It is supplied in Bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-563 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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