DMN5L06VK-13
MOSFET 2N-CH 50V 0.28A SOT563Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN5L06VK-13 is a dual N-channel MOSFET array packaged in a compact SOT-563. This device offers a 50V drain-to-source voltage capability and a continuous drain current of 280mA at 25°C. The ON-resistance is specified at 2 Ohms maximum for an Id of 50mA and Vgs of 5V. It features a threshold voltage (Vgs(th)) of 1.2V maximum at 250µA, with a maximum input capacitance (Ciss) of 50pF at 25V. The component is rated for a maximum power dissipation of 250mW and operates across a temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 50mA, 5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-563 |
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