DMN5L06VA-7
MOSFET 2N-CH 50V 0.28A SOT563Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN5L06VA-7 is a 2 N-Channel MOSFET array designed for applications requiring efficient switching. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 280mA at 25°C. The logic-level gate enhances compatibility with low-voltage control signals. With a low Rds(On) of 3 Ohms maximum at 200mA and 2.7V, it minimizes conduction losses. The device is supplied in a compact SOT-563 surface mount package, ideal for space-constrained designs. Its maximum power dissipation is 150mW, and it operates across a temperature range of -55°C to 150°C. This MOSFET array is well-suited for portable electronics, power management circuits, and general-purpose switching in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 280mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 200mA, 2.7V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-563 |
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