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DMN5L06V-7

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DMN5L06V-7

MOSFET 2N-CH 50V 0.28A SOT563

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated's DMN5L06V-7 is a dual N-channel MOSFET array packaged in a compact SOT-563 surface-mount configuration. This device offers a 50V drain-source breakdown voltage and a continuous drain current capability of 280mA at 25°C. Featuring logic-level gate drive, it exhibits a maximum on-resistance of 3 Ohms at 200mA and 2.7V Vgs, with a nominal threshold voltage of 1.2V at 250µA. The DMN5L06V-7 has a power dissipation rating of 150mW and an input capacitance of 50pF at 25V. Its operating temperature range spans from -55°C to 150°C. This component is widely utilized in consumer electronics and industrial applications requiring efficient switching in space-constrained designs. The part is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max150mW
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C280mA
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
Rds On (Max) @ Id, Vgs3Ohm @ 200mA, 2.7V
Gate Charge (Qg) (Max) @ Vgs-
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageSOT-563

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