DMN5L06DW-7
MOSFET 2N-CH 50V 0.28A SOT363Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN5L06DW-7 is a dual N-channel MOSFET array housed in a SOT-363 package. This device features a 50V drain-source breakdown voltage and a continuous drain current capability of 280mA at 25°C. The MOSFET array is designed with a logic level gate, and its on-resistance (Rds On) is specified at 3 Ohms maximum when driven at 200mA with a 2.7V gate-source voltage. The maximum power dissipation is 200mW, with an operating temperature range of -55°C to 150°C. Input capacitance (Ciss) is a maximum of 50pF at 25V. This component is suitable for applications in consumer electronics and general-purpose switching. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 200mW |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 280mA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 200mA, 2.7V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-363 |
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