DMN33D9LV-13
MOSFET 2N-CH 30V 0.35A SOT563Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated's DMN33D9LV-13 is a dual N-channel MOSFET array designed for compact applications. This device features a 30V drain-to-source voltage and a continuous drain current of 350mA at 25°C. With a maximum power dissipation of 430mW, it is housed in a SOT-563 surface mount package. The Rds On is specified at 2.4 Ohms maximum at 250mA and 10V Vgs. Key electrical characteristics include a gate charge of 1.23nC at 10V and an input capacitance of 48pF at 5V. The threshold voltage (Vgs(th)) is a maximum of 1.4V at 100µA. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in consumer electronics and portable devices. The DMN33D9LV-13 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 430mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 48pF @ 5V |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 250mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.4V @ 100µA |
| Supplier Device Package | SOT-563 |
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