DMN32D2LV-7
MOSFET 2N-CH 30V 0.4A SOT563Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN32D2LV-7 is a dual N-channel MOSFET array in a SOT-563 package. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 400mA at 25°C. The MOSFET array is designed with a logic level gate, offering a Vgs(th) of 1.2V at 250µA. The Rds On is specified at 1.2 Ohms maximum when sourcing 100mA with a 4V Vgs. With a maximum power dissipation of 400mW and an operating temperature range of -55°C to 150°C, this component is suitable for applications in consumer electronics and industrial automation. The DMN32D2LV-7 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 400mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 400mA |
| Input Capacitance (Ciss) (Max) @ Vds | 39pF @ 3V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 100mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-563 |