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DMN3012LFG-7

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DMN3012LFG-7

MOSFET 2N-CH 30V 20A POWERDI3333

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMN3012LFG-7 is a dual N-channel MOSFET array designed for high-efficiency power management applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 20A at 25°C (Tc). The low on-resistance, specified at 12mOhm and 6mOhm at 15A and 5V Vgs, minimizes conduction losses, making it suitable for demanding power conversion circuits. The DMN3012LFG-7 is housed in an 8-PowerLDFN package, specifically the PowerDI3333-8 (Type D), enabling excellent thermal performance with a maximum power dissipation of 2.2W. Key electrical characteristics include gate charge (Qg) of 6.1nC and 12.6nC, and input capacitance (Ciss) of 850pF and 1480pF, facilitating optimized switching performance. Threshold voltages (Vgs(th)) are 2.1V and 1.15V. This MOSFET array finds application in automotive, industrial, and consumer electronics sectors requiring robust power switching solutions. The component is supplied in tape and reel packaging for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerLDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 4.5V, 12.6nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.15V @ 250µA
Supplier Device PackagePowerDI3333-8 (Type D)

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