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DMN3012LFG-13

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DMN3012LFG-13

MOSFET 2N-CH 30V 20A POWERDI3333

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated's DMN3012LFG-13 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 20A (Tc). The low on-resistance, with Rds(On) as low as 6mOhm at 15A and 5V, ensures minimal power dissipation, supporting a maximum power rating of 2.2W. The DMN3012LFG-13 utilizes advanced MOSFET technology and is housed in an 8-PowerLDFN package, specifically the PowerDI3333-8 (Type D) footprint, for efficient surface mounting. Key electrical characteristics include input capacitance (Ciss) up to 1480pF at 15V and gate charge (Qg) up to 12.6nC at 4.5V, enabling high-speed switching performance. The threshold voltage (Vgs(th)) is rated at a maximum of 2.1V at 250µA. This device operates across a wide temperature range of -55°C to 150°C (TJ). It is commonly employed in automotive, industrial, and consumer electronics for power management and load switching. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerLDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds850pF @ 15V, 1480pF @ 15V
Rds On (Max) @ Id, Vgs12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 4.5V, 12.6nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.15V @ 250µA
Supplier Device PackagePowerDI3333-8 (Type D)

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