DMN26D0UDJ-7
MOSFET 2N-CH 20V 0.24A SOT963Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN26D0UDJ-7 is a dual N-channel MOSFET array designed for surface mount applications. This component offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 240mA at 25°C. The MOSFET array features a logic level gate and a maximum power dissipation of 300mW. Its on-resistance (Rds On) is specified at 3 Ohms maximum at 100mA and 4.5V gate-source voltage. The SOT-963 package is supplied on tape and reel. This component is suitable for use in portable electronics and general purpose switching applications. Key parameters include an input capacitance (Ciss) of 14.1pF at 15V and a gate threshold voltage (Vgs(th)) of 1.05V maximum at 250µA. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 240mA |
| Input Capacitance (Ciss) (Max) @ Vds | 14.1pF @ 15V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 100mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.05V @ 250µA |
| Supplier Device Package | SOT-963 |
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