DMN2215UDM-7
MOSFET 2N-CH 20V 2A SOT26Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN2215UDM-7 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 2A at 25°C. The device offers a low on-resistance of 100mOhm maximum at 2.5A and 4.5V gate-source voltage, indicative of its logic-level gate operation. With a maximum power dissipation of 650mW and an input capacitance of 188pF at 10V, the DMN2215UDM-7 is suitable for power management solutions in portable electronics and automotive systems. It is supplied in a compact SOT-26 surface-mount package, mounted on tape and reel for automated assembly. The operating temperature range is specified from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 650mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 188pF @ 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-26 |