DMN2041UVT-13
MOSFET 2N-CH 20V 5.8A TSOT26Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN2041UVT-13 is a dual N-channel MOSFET array designed for efficient power switching applications. Featuring a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.8A at 25°C, this component offers a low on-resistance (Rds On) of 28mOhm at 8.2A and 4.5V. The MOSFET array is housed in a space-saving TSOT-26 package, enabling high-density board designs. Key parameters include a gate charge (Qg) of 9.1nC at 4.5V and input capacitance (Ciss) of 689pF at 10V. With a maximum power dissipation of 1.1W, it operates within a temperature range of -55°C to 150°C. This device is commonly utilized in consumer electronics and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 689pF @ 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 8.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.1nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | TSOT-26 |
| Grade | - |
| Qualification | - |
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