DMN2040LSD-13
MOSFET 2N-CH 20V 7A 8SOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN2040LSD-13 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. The MOSFET array is built with Metal Oxide technology and offers a low on-resistance (Rds On) of 26mOhm at 6A and 4.5V, contributing to reduced power dissipation. Its logic level gate capability simplifies drive requirements, and the device has a threshold voltage (Vgs(th)) of 1.2V at 250µA. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, it supports a maximum power dissipation of 2W. This component is suitable for use in automotive and industrial power management systems. The DMN2040LSD-13 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 562pF @ 10V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-SOP |
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