DMN2010UDZ-7
MOSFET 2N-CH 24V 11A 6UDFNManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated DMN2010UDZ-7 is a dual N-channel MOSFET array designed for space-constrained applications. This device features a 24V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The low on-resistance of 7mOhm at 5.5A and 4.5V (Vgs) minimizes conduction losses, while the 700mW maximum power dissipation is suitable for thermal management in compact designs. The U-DFN2535-6 package with an exposed pad offers efficient heat dissipation and a small footprint. Key electrical parameters include a gate charge (Qg) maximum of 33.2nC at 4.5V and an input capacitance (Ciss) maximum of 2665pF at 10V. This component is commonly found in power management, battery charging, and consumer electronics. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 2665pF @ 10V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 5.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 33.2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | U-DFN2535-6 |
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