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DMN2010UDZ-7

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DMN2010UDZ-7

MOSFET 2N-CH 24V 11A 6UDFN

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Diodes Incorporated DMN2010UDZ-7 is a dual N-channel MOSFET array designed for space-constrained applications. This device features a 24V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The low on-resistance of 7mOhm at 5.5A and 4.5V (Vgs) minimizes conduction losses, while the 700mW maximum power dissipation is suitable for thermal management in compact designs. The U-DFN2535-6 package with an exposed pad offers efficient heat dissipation and a small footprint. Key electrical parameters include a gate charge (Qg) maximum of 33.2nC at 4.5V and an input capacitance (Ciss) maximum of 2665pF at 10V. This component is commonly found in power management, battery charging, and consumer electronics. It is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max700mW
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C11A
Input Capacitance (Ciss) (Max) @ Vds2665pF @ 10V
Rds On (Max) @ Id, Vgs7mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs33.2nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageU-DFN2535-6

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