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DMN2008LFU-13

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DMN2008LFU-13

MOSFET 2N-CH 20V 14.5A 6UDFN

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Diodes Incorporated DMN2008LFU-13 is a 20V, dual N-channel MOSFET array packaged in a 6-UFDFN (U-DFN2030-6 Type B) surface mount configuration. This component offers a continuous drain current capability of 14.5A at 25°C and a maximum power dissipation of 1W. Key electrical parameters include a low Rds(on) of 5.4mOhm at 5.5A and 4.5V, a gate charge of 42.3nC at 10V, and an input capacitance of 1418pF at 10V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. Operating temperature range is from -55°C to 150°C. This device is commonly utilized in power management applications across automotive, consumer electronics, and industrial sectors. The DMN2008LFU-13 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UFDFN Exposed Pad
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C14.5A
Input Capacitance (Ciss) (Max) @ Vds1418pF @ 10V
Rds On (Max) @ Id, Vgs5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs42.3nC @ 10V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageU-DFN2030-6 (Type B)

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