DMN2008LFU-13
MOSFET 2N-CH 20V 14.5A 6UDFNManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated DMN2008LFU-13 is a 20V, dual N-channel MOSFET array packaged in a 6-UFDFN (U-DFN2030-6 Type B) surface mount configuration. This component offers a continuous drain current capability of 14.5A at 25°C and a maximum power dissipation of 1W. Key electrical parameters include a low Rds(on) of 5.4mOhm at 5.5A and 4.5V, a gate charge of 42.3nC at 10V, and an input capacitance of 1418pF at 10V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 250µA. Operating temperature range is from -55°C to 150°C. This device is commonly utilized in power management applications across automotive, consumer electronics, and industrial sectors. The DMN2008LFU-13 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 14.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1418pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 5.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 42.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | U-DFN2030-6 (Type B) |
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