DMN16M9UCA6-7
MOSFET 2N-CH X3-DSN2718-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Diodes Incorporated DMN16M9UCA6-7 is a dual N-channel MOSFET array housed in an X3-DSN2718-6 package for surface mounting. This component offers a maximum power dissipation of 2.4W and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge (Qg) of 35.2nC at 4.5V and an input capacitance (Ciss) of 2360pF at 6V. The threshold voltage (Vgs(th)) is a maximum of 1.3V at 1mA. This MOSFET array is commonly employed in power management and switching applications within the automotive and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 6V |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 35.2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | X3-DSN2718-6 |
Request a Quote
Clients Also Buy
DMN62D0UDWQ-13
MOSFET 2N-CH 60V 0.35A SOT363
DMN2004VK-7B
MOSFET 2N-CH 20V 0.54A SOT563
ZXMC3A16DN8QTA
MOSFET N/P-CH 30V 6.4A/5.4A 8SO
