DMN16M8UCA6-7
MOSFET 2N-CH 12V X3-DSN2718-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN16M8UCA6-7, a dual N-channel MOSFET array, offers a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15.5A at 25°C (Ta). This device features a low Rds(on) of 5.6mOhm at 3A, 4.5V, and a gate charge (Qg) of 45.4nC maximum at 6V. The input capacitance (Ciss) is rated at 2333pF maximum at 6V. Packaged in a 6-SMD, No Lead X3-DSN2718-6, the DMN16M8UCA6-7 is designed for surface mounting with a power dissipation of 1.1W. Its operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 2333pF @ 6V |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 45.4nC @ 6V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | X3-DSN2718-6 |
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