DMN16M0UCA6-7
MOSFET 2N-CH 12V 17A X4-DSN2112Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN16M0UCA6-7 is a dual N-channel, common-drain MOSFET array designed for high-density power management applications. This device features a 12V Vdss rating and a continuous drain current capability of 17A at 25°C ambient temperature, with a low Rds(on) of 5.9mOhm at 5A and 4.5V Vgs. The MOSFET array is housed in a compact 6-SMD, No Lead X4-DSN2112-6 package, suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 24nC at 4.5V and a threshold voltage (Vgs(th)) of 1.3V at 1mA. With a maximum power dissipation of 900mW and an operating temperature range of -55°C to 150°C, this component is well-suited for use in automotive, industrial, and consumer electronics power control circuits. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | X4-DSN2112-6 |
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