DMN15M5UCA6-7
MOSFET 2N-CH 12V X4-DSN2117-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMN15M5UCA6-7 is a 12V, 2 N-Channel MOSFET array in a 6-XFBGA, WLCSP (X4-DSN2117-6) package. This surface mount component features a continuous drain current capability of 16.5A (Ta) at 25°C and a maximum power dissipation of 1.2W. Key electrical parameters include a Vgs(th) of 1.3V (Max) @ 840µA, input capacitance (Ciss) of 59pF (Max) @ 10V, and gate charge (Qg) of 36.6nC (Max) @ 4V. The on-resistance (Rds On) is specified at 5.1mOhm @ 4A, 4.5V. The device operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel. This MOSFET array is utilized in applications such as power management and portable electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.2W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 59pF @ 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 36.6nC @ 4V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 840µA |
| Supplier Device Package | X4-DSN2117-6 |
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