DMN15M3UCA6-7
MOSFET 2N-CH 14V X3-DSN2718-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated DMN15M3UCA6-7 is a dual N-channel MOSFET array designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 14V and a continuous Drain Current (Id) of 16.5A (Ta) at 25°C. The device offers a low On-Resistance (Rds On) of 5.8mOhm at 3A, 4.5V, and a Gate Charge (Qg) of 35.2nC maximum at 4.5V. With a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C (TJ), it is suitable for demanding environments. The DMN15M3UCA6-7 utilizes the X3-DSN2718-6 package, a 6-pin surface mount configuration, and is supplied on tape and reel. Its configuration as dual common source MOSFETs makes it ideal for power management solutions in automotive and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Source |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | - |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 14V |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 6V |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 35.2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | X3-DSN2718-6 |
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