DMN13M9UCA6-7
MOSFET 2N-CH X3-DSN3518-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated presents the DMN13M9UCA6-7, a dual N-channel MOSFET array in a compact X3-DSN3518-6 package. This surface-mount component delivers 2.67W of power dissipation and features a maximum gate charge (Qg) of 56.5nC at 4.5V, with an input capacitance (Ciss) of 3315pF at 6V. The threshold voltage (Vgs(th)) is specified at a maximum of 1.3V at 1mA. Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics, industrial control, and automotive systems where space-constrained power management is critical. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.67W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3315pF @ 6V |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 56.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | X3-DSN3518-6 |
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