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DMN12M3UCA6-7

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DMN12M3UCA6-7

MOSFET 2N-CH 14V X4-DSN3118-6

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated's DMN12M3UCA6-7 is a 6-pin X4-DSN3118-6 surface mount MOSFET array featuring two N-channel devices. This component offers a 14V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 24.4A at 25°C (Ta). The low on-resistance is specified at 2.75mOhm at 6A and 4.5V (Vgs). Key electrical parameters include a maximum Gate Charge (Qg) of 68.6nC at 4V and a maximum Input Capacitance (Ciss) of 4593pF at 10V (Vds). The device has a power dissipation of 1.1W and an operating temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and consumer electronics requiring efficient power switching. It is supplied in a Tape & Reel (TR) package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W
Drain to Source Voltage (Vdss)14V
Current - Continuous Drain (Id) @ 25°C24.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds4593pF @ 10V
Rds On (Max) @ Id, Vgs2.75mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs68.6nC @ 4V
FET Feature-
Vgs(th) (Max) @ Id1.4V @ 1.41mA
Supplier Device PackageX4-DSN3118-6

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