DMN1006UCA6-7
MOSFET 2N-CH X3-DSN2718-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated presents the DMN1006UCA6-7, a 2-channel MOSFET array. This device features a 6-SMD, No Lead package with X3-DSN2718-6 supplier device package, suitable for surface mount applications. The technology employed is Metal Oxide Field-Effect Transistor (MOSFET). Key parameters include a maximum gate charge (Qg) of 35.2 nC at 4.5V and a maximum input capacitance (Ciss) of 2360 pF at 6V. The device operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum power dissipation of 2.4W. The threshold voltage (Vgs(th)) is a maximum of 1.3V at 1mA. This MOSFET array is commonly utilized in power management and switching applications across various industries, including consumer electronics and industrial automation. The component is supplied on a tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2360pF @ 6V |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | 35.2nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | X3-DSN2718-6 |
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