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DMN1002UCA6-7

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DMN1002UCA6-7

MOSFET 2N-CH X4-DSN3118-6

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMN1002UCA6-7 is a MOSFET array featuring four 2-channel configurations with a common drain. This device is housed in an X4-DSN3118-6 package, a compact 6-SMD, No Lead footprint suitable for surface mounting. The array provides a maximum power dissipation of 1.1W and operates across a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 68.6nC at 4V. This MOSFET array is utilized in applications such as power management and signal switching within the consumer electronics and industrial automation sectors. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max1.1W
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs-
Gate Charge (Qg) (Max) @ Vgs68.6nC @ 4V
FET Feature-
Vgs(th) (Max) @ Id-
Supplier Device PackageX4-DSN3118-6

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