DMG4932LSD-13
MOSFET 2N-CH 30V 9.5A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMG4932LSD-13 is a dual N-channel MOSFET array in an 8-SOIC package, designed for efficient power switching applications. This component features a Drain to Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 9.5A at 25°C, with a low Rds(on) of 15mOhm at 9A and 10V. The logic-level gate simplifies drive requirements. Key parameters include a Gate Charge (Qg) of 42nC (Max) at 10V and an Input Capacitance (Ciss) of 1932pF (Max) at 15V. With a maximum power dissipation of 1.19W and an operating temperature range of -55°C to 150°C, it is suitable for use in automotive and industrial power management systems. The device is supplied in Tape & Reel (TR) packaging for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.19W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1932pF @ 15V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SO |
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