DMC6070LND-13
MOSFET N/P-CH 60V 3.1A PWRDI3333Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMC6070LND-13 is a MOSFET array featuring complementary N-channel and P-channel devices within a single PowerDI3333-8 (Type UXB) package. This surface-mount component offers a drain-to-source voltage (Vdss) of 60V, with continuous drain current ratings of 3.1A for the N-channel and 2.4A for the P-channel at 25°C. The array exhibits a maximum on-resistance (Rds On) of 85mOhm at 1.5A, 10V. Key characteristics include a gate charge (Qg) of 11.5nC (max) at 10V and input capacitance (Ciss) of 731pF (max) at 20V. The device supports a maximum power dissipation of 1.4W and operates across an extended temperature range of -55°C to 150°C. This component is suitable for applications in power management, battery charging, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 731pF @ 20V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerDI3333-8 (Type UXB) |
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