DMC6070LFDH-7
MOSFET N/P-CH 60V 3.1A 8VDFNManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated MOSFET Array DMC6070LFDH-7 offers a 60V breakdown voltage with N-channel and P-channel configurations. This device features a logic-level gate with a typical Rds(on) of 85mOhm at 1.5A and 10V Vgs. Continuous drain current is rated at 3.1A for the N-channel and 2.4A for the P-channel, with a maximum power dissipation of 1.4W. Key parameters include a gate charge of 11.5nC (max) at 10V and input capacitance of 731pF (max) at 20V. The DMC6070LFDH-7 is housed in an 8-VDFN (V-DFN3030-8) package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component is utilized in applications such as power management and battery charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 731pF @ 20V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | V-DFN3030-8 |
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