DMC3061SVT-7
MOSFET N/P-CH 30V 3.4A TSOT23-6Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMC3061SVT-7 is a complementary N-channel and P-channel MOSFET array housed in a TSOT-23-6 package. This device features a drain-source voltage (Vdss) of 30V, with continuous drain current ratings of 3.4A for the N-channel and 2.7A for the P-channel at 25°C ambient. Key electrical characteristics include low on-resistance, with the N-channel exhibiting 60mOhm at 3.1A/10V and the P-channel at 95mOhm at 2.7A/10V. Gate charge (Qg) is specified at 6.6nC (N-ch) and 6.8nC (P-ch), with input capacitance (Ciss) at 278pF (N-ch) and 287pF (P-ch) at their respective Vds conditions. The MOSFETs operate within an extended temperature range of -55°C to 150°C (TJ) and have a maximum power dissipation of 880mW. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel Complementary |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 880mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 2.7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 278pF @ 15V, 287pF @ 15V |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V, 6.8nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA, 2.2V @ 250µA |
| Supplier Device Package | TSOT-23-6 |
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