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DMC3035LSD-13

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DMC3035LSD-13

MOSFET N/P-CH 30V 6.9A/5A 8SOP

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Diodes Incorporated DMC3035LSD-13 is a complementary N-channel and P-channel MOSFET array designed for demanding applications. This device features a 30V drain-source breakdown voltage and supports continuous drain currents of 6.9A for the N-channel and 5A for the P-channel at 25°C. Engineered with a logic level gate, it offers reduced drive requirements. The array exhibits a low on-resistance of 35mOhm at an Id of 6.9A and Vgs of 10V for the N-channel. Key electrical parameters include a maximum gate charge (Qg) of 8.6nC at 10V and input capacitance (Ciss) of 384pF at 15V. Housed in an 8-SOP package with surface mount capability, the DMC3035LSD-13 provides a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. This component finds utility in various sectors including automotive and industrial power management.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6.9A, 5A
Input Capacitance (Ciss) (Max) @ Vds384pF @ 15V
Rds On (Max) @ Id, Vgs35mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package8-SOP

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