DMC3035LSD-13
MOSFET N/P-CH 30V 6.9A/5A 8SOPManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated DMC3035LSD-13 is a complementary N-channel and P-channel MOSFET array designed for demanding applications. This device features a 30V drain-source breakdown voltage and supports continuous drain currents of 6.9A for the N-channel and 5A for the P-channel at 25°C. Engineered with a logic level gate, it offers reduced drive requirements. The array exhibits a low on-resistance of 35mOhm at an Id of 6.9A and Vgs of 10V for the N-channel. Key electrical parameters include a maximum gate charge (Qg) of 8.6nC at 10V and input capacitance (Ciss) of 384pF at 15V. Housed in an 8-SOP package with surface mount capability, the DMC3035LSD-13 provides a maximum power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. This component finds utility in various sectors including automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A, 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 384pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-SOP |
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