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DMC3021LK4-13

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DMC3021LK4-13

MOSFET N/P-CH 30V 9.4A TO252-4L

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMC3021LK4-13 is a dual N-channel and P-channel MOSFET array with a 30V drain-source voltage rating. This device features a common drain configuration and is packaged in a TO-252-4L surface-mount format. It offers continuous drain currents of 9.4A for the N-channel and 6.8A for the P-channel at 25°C. The MOSFETs utilize logic-level gate technology, with a typical gate threshold voltage of 2.1V at 250µA. The on-resistance (Rds On) is rated at 21mOhm maximum for both channels when conducting 7A with a 10V gate-source voltage. Key electrical characteristics include input capacitance (Ciss) of 751pF maximum at 10V and gate charge (Qg) of 17.4nC maximum at 10V. The DMC3021LK4-13 is suitable for applications in power management, automotive, and industrial control systems. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-5, DPAK (4 Leads + Tab), TO-252AD
Mounting TypeSurface Mount
ConfigurationN and P-Channel, Common Drain
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.7W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9.4A, 6.8A
Input Capacitance (Ciss) (Max) @ Vds751pF @ 10V
Rds On (Max) @ Id, Vgs21mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs17.4nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device PackageTO-252-4L

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