DMC3018LSD-13
MOSFET N/P-CH 30V 9.1A/6A 8SOManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMC3018LSD-13 is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage rating and continuous drain currents of 9.1A for the N-channel and 6A for the P-channel at 25°C. The logic-level gate ensures compatibility with lower voltage drive signals. Key electrical characteristics include a maximum Rds(On) of 20mOhm at 6.9A and 10V for the N-channel, and a maximum gate charge (Qg) of 12.4nC at 10V. The MOSFET array is housed in a compact 8-SOIC (0.154", 3.90mm width) package, suitable for surface mounting and supporting a maximum power dissipation of 2.5W. Operating temperature range is -55°C to 150°C (TJ). This device finds application in power management, battery management, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A, 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 631pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 8-SO |