DMC2057UVT-7
MOSFET N/P-CH 20V 4A/3.3A TSOT26Manufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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Diodes Incorporated DMC2057UVT-7 is a complementary N-channel and P-channel MOSFET array in a TSOT-26 package. This device features a 20V drain-source breakdown voltage and offers continuous drain currents of 4A for the N-channel and 3.3A for the P-channel, both measured at 25°C ambient. On-resistance is specified as 42mOhm at 5A, 4.5V for the N-channel and 70mOhm at 3.5A, 4.5V for the P-channel. Gate charge values are 10.5nC (max) at 10V for the N-channel and 6.5nC (max) at 4.5V for the P-channel. Input capacitance (Ciss) is a maximum of 416pF for the N-channel and 536pF for the P-channel, both at 10V Vds. Threshold voltages (Vgs(th)) are 1.2V (max) at 250µA for the N-channel and 1V (max) at 250µA for the P-channel. With a maximum power dissipation of 700mW (Ta), this MOSFET array is suitable for applications in consumer electronics and industrial control systems. It operates over a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel Complementary |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 3.3A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 416pF @ 10V, 536pF @ 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V, 6.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA, 1V @ 250µA |
| Supplier Device Package | TSOT-26 |
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