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DMC2038LVT-7

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DMC2038LVT-7

MOSFET N/P-CH 20V TSOT26

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

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Diodes Incorporated DMC2038LVT-7 is a MOSFET array featuring N-channel and P-channel transistors within a TSOT-26 package. This component offers a Drain to Source Voltage (Vdss) of 20V, with a continuous drain current capability of 3.7A for the N-channel and 2.6A for the P-channel at 25°C. The device is designed with a logic level gate, ensuring compatibility with lower gate drive voltages. Key parameters include a maximum power dissipation of 800mW, a typical gate charge (Qg) of 17nC at 10V, and input capacitance (Ciss) of 530pF at 10V. The Rds On (Max) is 35mOhm at 4A and 4.5V. This MOSFET array is suitable for applications requiring efficient switching and power management in areas such as consumer electronics, industrial control, and automotive systems. The operating temperature range is -55°C to 150°C. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
ConfigurationN and P-Channel
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max800mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.7A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds530pF @ 10V
Rds On (Max) @ Id, Vgs35mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTSOT-26

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