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DMC1017UPD-13

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DMC1017UPD-13

MOSFET N/P-CH 12V 13A PWRDI50

Manufacturer: Diodes Incorporated

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Diodes Incorporated DMC1017UPD-13 is a complementary N-channel and P-channel MOSFET array designed for automotive applications. This AEC-Q101 qualified component features a 12V drain-to-source voltage and a continuous drain current capability of 13A (Ta) for the N-channel and 9.4A (Ta) for the P-channel at 25°C. The device is housed in a PowerDI5060-8 surface mount package, offering efficient thermal performance with a maximum power dissipation of 2.3W. Key electrical characteristics include low on-resistance, with the N-channel exhibiting 17mOhm at 11.8A, 4.5V and the P-channel at 32mOhm at 8.9A, 4.5V. Gate charge values are 18.6nC (N-channel) and 23.7nC (P-channel) at 4.5V, with a threshold voltage of 1.5V @ 250µA. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
ConfigurationN and P-Channel Complementary
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2.3W
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 9.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds1787pF @ 6V, 2100pF @ 6V
Rds On (Max) @ Id, Vgs17mOhm @ 11.8A, 4.5V, 32mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs18.6nC @ 4.5V, 23.7nC @ 4.5V
FET Feature-
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackagePowerDI5060-8
GradeAutomotive
QualificationAEC-Q101

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