DI9945T
MOSFET 2N-CH 60V 3.5A 8-SOICManufacturer: Diodes Incorporated
Categories: FET, MOSFET Arrays
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The Diodes Incorporated DI9945T is a dual N-channel MOSFET array designed for demanding applications. This component features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 3.5A per channel at 25°C. With a low on-resistance of 100mOhm maximum at 3.5A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 2W. Key electrical characteristics include an input capacitance (Ciss) of 435pF maximum at 25V Vds and a gate charge (Qg) of 30nC maximum at 10V Vgs. The DI9945T is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package, supplied in cut tape. This MOSFET array is suitable for power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 25V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
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