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ZXTDB2M832TA

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ZXTDB2M832TA

TRANS NPN/PNP 20V 4.5A/3.5A 8MLP

Manufacturer: Diodes Incorporated

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Diodes Incorporated ZXTDB2M832TA is a bipolar transistor array featuring one NPN and one PNP transistor in a compact 8-MLP (3x2) package. This device supports a collector-emitter breakdown voltage of up to 20V, with maximum collector currents of 4.5A for the NPN and 3.5A for the PNP. Transition frequencies are specified at 140MHz for the NPN and 180MHz for the PNP. Minimum DC current gain (hFE) is 200 @ 2A, 2V for the NPN and 150 @ 2A, 2V for the PNP. Saturation voltages are 270mV @ 125mA, 4.5A (NPN) and 300mV @ 350mA, 3.5A (PNP). The component offers a maximum power dissipation of 1.7W and operates within an industrial temperature range of -55°C to 150°C. This surface mount device is supplied on tape and reel. Applications include power management and motor control in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max1.7W
Current - Collector (Ic) (Max)4.5A, 3.5A
Voltage - Collector Emitter Breakdown (Max)20V
Vce Saturation (Max) @ Ib, Ic270mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max)25nA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2A, 2V / 150 @ 2A, 2V
Frequency - Transition140MHz, 180MHz
Supplier Device Package8-MLP (3x2)

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