ZXT12P40DXTC
TRANS 2PNP 40V 2A 8MSOPManufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated ZXT12P40DXTC is a dual PNP bipolar junction transistor array designed for efficient switching and amplification applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 2A. With a transition frequency of 130MHz, it is suitable for moderate-frequency operations. The device exhibits a maximum collector-emitter saturation voltage of 260mV at 100mA collector current and 1A base current, along with a minimum DC current gain (hFE) of 300 at 1A collector current and 2V collector-emitter voltage. This BJT array offers a maximum power dissipation of 1.04W and is packaged in an 8-MSOP (8-TSSOP) for surface mounting. Typical applications include power management, consumer electronics, and industrial control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 1.04W |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 2V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | 8-MSOP |
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