ZHB6792TC
TRANS 2NPN/2PNP 70V 1A SOT223Manufacturer: Diodes Incorporated
Categories: Bipolar Transistor Arrays
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Diodes Incorporated ZHB6792TC is a bipolar transistor array featuring two NPN and two PNP transistors configured as an H-bridge. This device offers a collector-emitter breakdown voltage of 70V and a continuous collector current capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 1.25W, it is suitable for applications requiring efficient switching and amplification. The minimum DC current gain (hFE) is 300 at 100mA and 2V. The device operates across a temperature range of -55°C to 150°C. Packaged in an SOT-223-8 (SM8) surface-mount configuration and supplied on tape and reel, the ZHB6792TC finds utility in motor control, power management, and general-purpose switching circuits within industrial and consumer electronics. Collector cutoff current (ICBO) is a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-223-8 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN, 2 PNP (H-Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power - Max | 1.25W |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 70V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SM8 |
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